IndiumV3, Russie, Analysis, bibRecord, 000288

Spin dynamics and hyperfine interaction in InAs semiconductor quantum dots

Identifieur interne : 000288 ( Russie/Analysis ); précédent : 000287; suivant : 000289

Spin dynamics and hyperfine interaction in InAs semiconductor quantum dots

Auteurs : RBID : Pascal:06-0412633

Descripteurs français

Pascal (Inist)
- Dynamique spin, Interaction hyperfine, Spectre résolution temporelle, Exciton, Relaxation spin, Polarisation circulaire, Orientation spin, Photoluminescence, Effet champ magnétique, Effet Overhauser, Indium arséniure, Semiconducteur, Point quantique, InAs, 7867H.

English descriptors

KwdEn :
- Circular polarization, Excitons, Hyperfine interactions, Indium arsenides, Magnetic field effects, Overhauser effect, Photoluminescence, Quantum dots, Semiconductor materials, Spin dynamics, Spin orientation, Spin relaxation, Time resolved spectra.

Abstract

We present a detailed study of the hyperfine interaction between carrier and nuclear spins in InAs semiconductor quantum dots. Time resolved measurements on excitons in positively charged quantum dots show the electron spin relaxation due to random fluctuations of the spin orientation of the nuclei in the quantum dot. A complimentary aspect of the hyperfine interaction can be uncovered in single dot continuous wave photoluminescence experiments in a weak magnetic field, namely the Overhauser shift due to the dynamic polarisation of the nuclei following excitation with circularly polarised light.

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Pascal:06-0412633

Le document en format XML

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<term>Excitons</term>
<term>Hyperfine interactions</term>
<term>Indium arsenides</term>
<term>Magnetic field effects</term>
<term>Overhauser effect</term>
<term>Photoluminescence</term>
<term>Quantum dots</term>
<term>Semiconductor materials</term>
<term>Spin dynamics</term>
<term>Spin orientation</term>
<term>Spin relaxation</term>
<term>Time resolved spectra</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Dynamique spin</term>
<term>Interaction hyperfine</term>
<term>Spectre résolution temporelle</term>
<term>Exciton</term>
<term>Relaxation spin</term>
<term>Polarisation circulaire</term>
<term>Orientation spin</term>
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<term>Effet champ magnétique</term>
<term>Effet Overhauser</term>
<term>Indium arséniure</term>
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<front><div type="abstract" xml:lang="en">We present a detailed study of the hyperfine interaction between carrier and nuclear spins in InAs semiconductor quantum dots. Time resolved measurements on excitons in positively charged quantum dots show the electron spin relaxation due to random fluctuations of the spin orientation of the nuclei in the quantum dot. A complimentary aspect of the hyperfine interaction can be uncovered in single dot continuous wave photoluminescence experiments in a weak magnetic field, namely the Overhauser shift due to the dynamic polarisation of the nuclei following excitation with circularly polarised light.</div>
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<fC01 i1="01" l="ENG"><s0>We present a detailed study of the hyperfine interaction between carrier and nuclear spins in InAs semiconductor quantum dots. Time resolved measurements on excitons in positively charged quantum dots show the electron spin relaxation due to random fluctuations of the spin orientation of the nuclei in the quantum dot. A complimentary aspect of the hyperfine interaction can be uncovered in single dot continuous wave photoluminescence experiments in a weak magnetic field, namely the Overhauser shift due to the dynamic polarisation of the nuclei following excitation with circularly polarised light.</s0>
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<s5>13</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>16</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>16</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>17</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>17</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>7867H</s0>
<s4>INC</s4>
<s5>60</s5>
</fC03>
<fN21><s1>275</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>NOEK International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors</s1>
<s2>8</s2>
<s3>Münster DEU</s3>
<s4>2006-02-20</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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   |texte=   Spin dynamics and hyperfine interaction in InAs semiconductor quantum dots
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Spin dynamics and hyperfine interaction in InAs semiconductor quantum dots

Spin dynamics and hyperfine interaction in InAs semiconductor quantum dots

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